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应用统计物理方法研究了高增益砷化镓光导开关中电流丝的自发辐射效应.导出了高增益砷化镓光导开关中电流丝的自发辐射规律,在砷化镓样品中引入复合辐射强度与辐射的波长分布函数的概念,近似确定了高增益砷化镓光导开关中电流丝的平均辐射复合系数为(883 nm)≈0.1125,导出了各辐射波长的辐射复合系数与平均辐射复合系数之间的关系,验证了峰值波长为890 nm的光输出能量与实验观察结果吻合,在理论上揭示了电流丝顶部的光生载流子密度的分布规律.结果表明:电流丝的体积面积比值和电流丝内平均载流子密度是影响电流丝辐射效应的两个主要因素,波长876 nm的辐射在紧邻电流丝顶部产生的最大载流子密度具有主导作用,最大光生载流子密度比电流丝内平均载流子密度小1–2个数量级.
The spontaneous emission of current filaments in high gain GaAs photoconductive switches was studied by using statistical physics method.The spontaneous emission of current filaments in high gain GaAs photoconductive switches was derived.The composite radiation intensities and the radiation were introduced into the samples of gallium arsenide , The average radiation recombination coefficient of the current filament in the high gain GaAs photoconductive switch is approximately (883 nm) ≈0.1125, and the relationship between the radiation recombination coefficient and the average radiation recombination coefficient of each radiation wavelength The results show that the optical carrier density at the top of the current filament is theoretically revealed by the experimental results.The results show that the ratio of the volume area of the current filament to that of the current filament The average carrier density is the two main factors that affect the radiation effect of the current wire. The radiation with the wavelength of 876 nm plays a leading role in the maximum carrier density generated near the top of the current wire. The maximum photocarrier density is higher than that of the average current carrying capacity The flow density is 1-2 orders of magnitude smaller.