氢气氛下区熔拉制的鼓棱无位错硅单晶，原生晶体经化学腐蚀，观察不到缺陷，包括微缺陷。但当块状热处理后，经腐蚀常常观察到尺度ｍｍ数量级的氢致缺陷（　型缺陷、麻坑）和微缺陷氢沉淀。为了消除这些缺陷，原生单晶需片状供应，片厚应小于１ｍｍ，或中照后的区熔（氢）硅单晶，片状，９４０℃、０．５ｈ退火，均能消除之。在电力电子器件的应用中，管芯等级合格率可保持在８０％以上 Fused pull-grooved dislocated silicon single crystal in hydrogen atmosphere. The primary crystals were chemically etched and no defects, including micro-defects, were observed. However, hydrogen-induced defects (type defects, hemp pits) and microdefective hydrogen precipitates on the order of mm in size are often observed after the massive heat treatment. In order to eliminate these defects, the native monocrystal needs to be supplied with flake, the sheet thickness should be less than 1mm, or the zone fused (hydrogen) silicon single crystal after flare, flake, annealed at 940 ℃ and 0.5h can be eliminated. In power electronics applications, die pass rate can be maintained at 80% or more