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运用湿化学与表面化学方法制备了ZnS/HgS/ZnS/CdS量子点量子阱 (QDQW )结构 ,以吸收光谱、光致发光及激发谱表征该结构 ,并研究了外层CdS对材料发光特性的影响 ,首次观测到CdS对中间HgS阱层发光的增强作用 ,并归因于隧道效应 (TunnelingEffect)的存在。
The structure of ZnS / HgS / ZnS / CdS quantum dot quantum well (QDQW) was prepared by wet chemical and surface chemical methods. The structure was characterized by absorption spectra, photoluminescence and excitation spectra. The effects of outer CdS on the luminescent properties For the first time, it is observed that the CdS enhances the luminescence of the intermediate HgS well layer and is attributed to the existence of the tunneling effect (Tunneling Effect).