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结合聚苯乙烯纳米球自组装技术和微机械制造技术提供了一种制备Spindt场致发射阵列阴极的新方法,并成功制备了集成度较高且均匀分布的微孔阵列,微孔孔径为300~500 nm,绝缘层厚度为500 nm,孔间距为750 nm,微孔集成度达到10~8个/cm~2,是普通光刻技术的10倍以上.利用CST粒子工作室的质点网格求解器对该工艺方法制备的Spindt阴极的场致发射特性进行了数值仿真,结果表明发射尖端曲率半径、栅极孔径以及尖端相对栅极的高度是影响发射电流的决定因素.
A novel method for preparing the cathode of Spindt field emission array is provided by combining the self-assembly technology of polystyrene nanospheres and the micromachining manufacturing technology. A highly integrated and uniformly distributed micropore array with a micropore diameter of 300 ~ 500 nm, the thickness of the insulating layer is 500 nm, the spacing of holes is 750 nm, the integration of micropores is 10 ~ 8 / cm ~ 2, which is more than 10 times of that of common lithography. The solver simulates the field emission characteristics of the Spindt cathode prepared by this method. The results show that the radii of the emitter tip, the gate aperture and the tip height relative to the gate are the determinants of the emission current.