Magnetic coupling in ferromagnetic semiconductor GaMnAs/AIGaMnAs bilayer devices

来源 :中国科学：物理学、力学、天文学英文版 | 被引量 : 0次 | 上传用户：jiangfan520

【摘要】

：

We carefully investigated the ferromagnetic coupling in the as-grown and annealed ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices.We observed that t

【作者】

：

CAO YuFei LI YanYong LI YuanYu

【机构】

：

TheStateKeyLaboratoryofSuperlatticesandMicrostructures

【出处】

：

中国科学：物理学、力学、天文学英文版

【发表日期】

：

2014年8期

【关键词】

：

铁磁半导体双层器件铁磁耦合低温退火磁相互作用耦合效率易磁化轴退火设备 magnetic coupling magnetoresistance

【基金项目】

：

This work was supported by the National Basic Research Program of China （Grant Nos. 2011CB922200 and 2009CB929301）, the National Natural Science Foundation of China （Grant Nos. 11174272 and 61225021）

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We carefully investigated the ferromagnetic coupling in the as-grown and annealed ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices.We observed that the magnetic interaction between the two layers strongly affects the magnetoresistance of the Ga

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Magnetic coupling in ferromagnetic semiconductor GaMnAs/AIGaMnAs bilayer devices

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