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以硅为衬底,采用射频磁控溅射技术制备了TiO_2薄膜,利用扫描电镜及拉曼光谱对退火前后的TiO_2进行分析。退火后的TiO_2具有良好的结晶特性,且呈锐钛矿结构。在此薄膜工艺条件下,以TiO_2为半导体层在玻璃基底上制备了Al/TiO_2/Pt肖特基二极管,并在153~433K范围内对其进行I-V测试。结果表明:在所有温度下,Al/TiO_2/Pt肖特基二极管均表现出良好的整流效应;其理想因子随温度升高而降低,势垒高度随温度升高而升高;在433K下,理想因子为1.31,势垒高度0.73,表明此肖特基二极管已接近理想的肖特基二极管。
TiO 2 thin films were prepared by RF magnetron sputtering using silicon as substrate. The TiO 2 before and after annealing was analyzed by scanning electron microscopy and Raman spectroscopy. The annealed TiO 2 has good crystallinity and anatase structure. Al / TiO_2 / Pt Schottky diodes were fabricated on glass substrate with TiO_2 as the semiconductor layer under the thin film process conditions, and the I-V test was carried out in the range of 153 ~ 433K. The results show that the Al / TiO_2 / Pt Schottky diode exhibits good rectification effect at all temperatures. The ideal factor decreases with increasing temperature and the barrier height increases with increasing temperature. At 433K, The ideal factor of 1.31 and a barrier height of 0.73 indicate that this Schottky diode is close to the ideal Schottky diode.