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对含驻留滑移带（ＰＳＢ）的 ［１２３］取向的疲劳 Ｃｕ单晶体，进行了高密度脉冲电流处理结果表明，高密度脉冲电流处理产生的热压应力改善了ＰＳＢ－基体界面的应力集中状态，使驻留滑移带局部消失理论计算同时表明，高密度脉冲电流处理能提高 Ｃｕ单晶疲劳寿命．
High-density pulsed current treatment of [123] -oriented fatigue Cu single crystals with resident slip band (PSB) results show that the thermal stress generated by high-density pulsed current processing improves the stress concentration of the PSB-matrix interface , The local vanishing slip band calculated theoretical calculations also show that high density pulse current treatment can improve the fatigue life of Cu single crystal.