SOS技术是改进半导体集成电路隔离工艺,提高电路性能而出现的一种新技术。它从六十年代初期问世以来,由于衬底材料和工艺等方面的原因,经历了十多年的徘徊。但是,SOS结构是半导体集成电路的理想结构。它的各有沅器件完全被兰宝石这样理想的绝缘体所隔离,大大地减少引线之间的寄生电 SOS technology is to improve the semiconductor integrated circuit isolation process, improve circuit performance and emerging a new technology. Since its introduction in the early 1960s, it has experienced more than a decade of wandering due to the substrate materials and technology. However, the SOS structure is an ideal structure for semiconductor integrated circuits. Each of its Yuan devices is completely insulated by such an ideal insulator as sapphire, greatly reducing the parasitic power between the leads