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决定Hg_(1-x)Cd_xTe光伏探测器性能的主要指标是其零偏压电阻与面积之乘积R_0A,Hg_(1-x)Cd_xTe材料中的深能级就是影响其PN结R_0A值的一个重要因素。因此,研究Hg_(1-x)Cd_xTe半导体中的深能级,弄清楚它对PN结性能的影响,对提高Hg_(1-x)Cd_xTe光伏探测器的性能有重要意义。研究Hg_(1-x)Cd_xTe材料中深能级的电学方法主要有三种,即深能级瞬态谱(DLTS)、导
The main index that determines the performance of a Hg_ (1-x) Cd_xTe PV detector is the product R_0A of its zero bias resistance and area. The deep level in the Hg_ (1-x) Cd_xTe material is an important factor affecting the value of its PN junction R_0A factor. Therefore, studying the deep level in the Hg_ (1-x) Cd_xTe semiconductor and figuring out its influence on the PN junction performance is of great significance to improve the performance of the Hg_ (1-x) Cd_xTe photovoltaic detector. There are mainly three kinds of electrical methods to study the deep level in Hg_ (1-x) Cd_xTe materials, namely, deep level transient spectroscopy (DLTS)