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研究了混晶材料ＧａＡｓ＿（１－ｘ）Ｐ＿ｘ：Ｎ（ｘ＝０．７６，０．６５）中的共振喇曼散射，在背散射配置的（１００）晶向观察到“禁戒”的ＴＯ声子散射模．这一实验现象解释为在共振激发Ｎ＿ｘ杂质带的条件下，由于晶体对称性的喇曼选择定则失效，ＴＯ模成为喇曼活性．根据热猝灭规律，还给出区分共振喇曼散射和热荧光的一个实用判据．
Resonance Raman scattering in mixed GaAs_ (1-x) P_x: N (x = 0.76,0.65) was investigated, and the “forbidden” TO was observed in the (100) Phonon scattering mode. This experimental phenomenon is explained by the Raman activity of the TO mode due to the failure of the Raman selection rule of the crystal symmetry due to resonant excitation of the N_x impurity band. According to the law of thermal quenching, a practical criterion for distinguishing between resonant Raman scattering and thermal fluorescence is also given.