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The investigation of multi-crystalline silicon(mc-Si) surface etching technology is a key point in solar cell research.In this paper,mc-Si surface was etched in the common alkaline solution modified by an additive for 20 minutes at 78-80°C.Samples’ surface morphology was observed by scanning electron microscope(SEM).It is firstly found that the etched mc-Si surface has the uniform distribution of trap pits although the morphologies of trap pits are slightly different on different crystallographic planes.Si(100) plane was covered with many small Si-mountain ranges or long V-shape channels arranged in a crisscross pattern.For(110) plane and(111) plane,they were full of a lot of triangle pit-traps(or quadrilateral holes) and twisted earthworm trap pits,respectively.The measured reflectance of the sample was 20.5% at wavelength range of 400-900 nm.These results illustrate that alkaline solution modified by an additive can effectively etch out trap pits with a good trapping light effect on mc-Si surfaces.This method should be very valuable for mc-Si solar cells.
The investigation of multi-crystalline silicon (mc-Si) surface etching technology is a key point in solar cell research. In this paper, mc-Si surface was etched in the common alkaline solution modified by an additive for 20 minutes at 78-80 ° C. Samples’ surface morphology was observed by scanning electron microscope (SEM). It is first found that the etched mc-Si surface has the uniform distribution of trap pits although the morphologies of trap pits are slightly different on different crystallographic planes. (100) plane was covered with many small Si-mountain ranges or long V-shape channels arranged in a crisscross pattern. For (110) plane and (111) plane, they were full of a lot of triangle pit-traps (or quadrilateral holes) and twisted earthworm trap pits, respectively. The measured reflectance of the sample was 20.5% at wavelength range of 400-900 nm. These results illustrate that alkaline solution modified by an additive can effectively etch out trap pits with a good trapping light effect on mc-Si surfaces. This method should be very valuable for mc-Si solar cells.