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介绍了一种适合高分辨力接近/接触式光刻的新型纳米级光刻对准方法。简要阐述了该对准方法的基本原理,探讨了应用该对准方法的光学结构设计,提出了照明光路与干涉条纹捕获光路的垂直设计,采用单色非曝光光源远心照明方式并外加补偿光路的结构设计。在软件处理方面,提出采用九点四线曲面拟合面阵CCD细分方法及最小二乘曲线拟合定位方法,实现光刻对准精度的进一步提高。该光刻对准方法能够克服现有对准技术的诸多缺陷,具有纳米级对准精度,能够满足纳米光刻的对准需求。
A new type of nano-scale lithography alignment method suitable for high resolution proximity / contact lithography is introduced. The basic principle of the alignment method is briefly described. The optical structure design using the alignment method is discussed. The vertical design of the illumination light path and the interference fringe capture light path is proposed. By using the monochromatic non-exposure light source telecentric illumination mode and the compensation light path Structural design. In the aspect of software processing, the subdivision method of nine point and four line surface fitting CCD and the fitting method of least squares curve fitting are proposed to further improve the precision of lithography alignment. The lithography alignment method can overcome the defects of the prior alignment technology, and has the nanometer level alignment precision and can meet the alignment requirements of nanolithography.