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本文首先研究了CO~(60)γ辐照对国产面结型硅二极管正向伏安特性的影响,发现在小电流区域正向特性变好;大电流区域变坏,进一步分析了所以如此的原因,采用了适当的模型,从理论上解释了伏安特性的变化。还研究了反向伏安特牲的变化及其在室温下的恢复。也发现在辐照下势垒电容的变化很小。本文还研究了的γ辐对国产面结型三极管共基极和共发射极h参数的影响,并作了理论上的分析。还比较了辐照前后的α_(cb)与I_e关系曲线的变化以及α_(cb)与f关系曲线的变化,并分析了变化的原因。
In this paper, the effect of CO ~ (60) γ irradiation on the forward volt-ampere characteristics of home-made surface-junction silicon diodes has been studied firstly. The results show that the forward current characteristics in the low-current areas become better and the high-current areas become worse. The reason, using an appropriate model, explains the changes in volt-ampere characteristics theoretically. The changes of the reverse voltammetry and its recovery at room temperature were also studied. It is also found that there is little change in the barrier capacitance under irradiation. In this paper, the effect of γ-radiation on the h parameters of the common-junction and common-emitter of domestic junction transistors is also studied. The theoretical analysis is made. The change of the curve of α_ (cb) and I_e and the curve of α_ (cb) and f before and after irradiation were also compared. The reason of the change was also analyzed.