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以APD-PIN结电容平衡门控猝灭电路(GPQC)和InGaAs/InP雪崩光电二极管(APD)为核心研制了可工作在宽门控频率范围下的近红外单光子探测器。门控信号为200 MHz以下任意重复频率的尖脉冲,门宽约1 ns,脉冲幅度约10 Vpp。采用与APD结电容特性相近的PIN高频二极管研发了APD-PIN结电容平衡门控猝灭电路,可有效地抑制门控微分噪声中的低频分量,抑制比大于40 d B。采用一组简单的9阶贝塞尔型电感-电容(LC)低通滤波电路滤除残余的高频噪声分量,并使用通用的宽带射频放大器对雪崩信号进行放大。在-52℃,0.1~200 MHz门控频率条件下,10%探测效率时暗计数率、后脉冲概率分别小于6×10~(-6)/gate、1.9%,最高探测效率可达26.4%。
A near-infrared single-photon detector capable of operating over a wide range of gate frequencies was developed with an APD-PIN junction capacitance balanced gated quenching circuit (GPQC) and an InGaAs / InP avalanche photodiode (APD). The gated signal is a spike at any repetition rate below 200 MHz with a gate width of about 1 ns and a pulse amplitude of about 10 Vpp. The APD-PIN junction capacitance-gated quenching circuit was developed by using a PIN high-frequency diode with similar capacitance characteristics to the APD junction, which effectively suppressed the low-frequency component of the gated differential noise with rejection greater than 40 dB. A simple, 9-order Bessel Inductor-to-Capacitor (LC) low-pass filter is used to filter out residual high-frequency noise components and amplify the avalanche signal using a common wideband RF amplifier. Under the condition of -52 ℃ and 0.1 ~ 200 MHz gating frequency, the dark counting rate and post-pulse probability are respectively less than 6 × 10 -6 /gate and 1.9% at 10% detection efficiency, and the maximum detection efficiency can reach 26.4% .