论文部分内容阅读
Single and dual S-dopcd GaAs/AlGaAs two-dimensional electron gas(2DEG) Hall devices for low magnetic field detection at room temperature are prepared.The sensitivity and noise spectrum of the Hall devices are measured for evaluating the signal-to-noise ratio performance.It is observed that the dual S-doped Hall devices achieve a minimum detectable magnetic field as low as 303 nT,which is better than the single S-doped Hall device prepared under the same growth condition.
Single and dual S-dopcd GaAs / AlGaAs two-dimensional electron gas (2DEG) Hall devices for low magnetic field detection at room temperature are prepared. The sensitivity and noise spectrum of the Hall devices are measured for evaluating the signal-to-noise ratio performance. It is observed that the dual S-doped Hall devices achieve a minimum detectable magnetic field as low as 303 nT, which is better than the single S-doped Hall device prepared under the same growth condition.