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采用特别设计的InGaAsP/InP多量子阱结构(MQW),研究了Cl2/H2电感耦合等离子体(ICP)刻蚀损伤,优化了低损伤ICP刻蚀的关键工艺参数,得到了一种低损伤、形貌良好的Bragg光栅的制作方法。结合优化的InP材料金属有机物化学气相沉积(MOCVD)外延生长工艺,制作出1.55μm分布反馈(DFB)激光器,端面镀膜前其阈值电流和斜率效率分别为15mA和0.3mW/mA,边模抑制比大于45dB。寿命加速老化实验结果显示,该器件40℃的中值寿命超过2×106h,表明了本文ICP光栅刻蚀工艺的可靠性。
A specially designed InGaAsP / InP multiple quantum well structure (MQW) was used to study the damage of Cl2 / H2 inductively coupled plasma (ICP) etching and optimize the key process parameters of low-damage ICP etching. Good shape Bragg grating production methods. A 1.55μm distributed feedback (DFB) laser was fabricated by optimizing the InP material metal organic chemical vapor deposition (MOCVD) epitaxial growth process. The threshold current and slope efficiency of the DFB laser were 15mA and 0.3mW / mA, respectively. More than 45dB. Life accelerated aging test results show that the device 40 ℃ median life expectancy of more than 2 × 106h, indicating the reliability of the ICP grating etching process.