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本文介绍了一种可以实用的侧墙式ＧａＡｓ量子线及其列阵结构．沿〔０１－１〕方向腐蚀条形的（３１１）Ａ衬底上，分子束外延生长的各向异性导致了侧墙量子线结构的形成．用光栅刻蚀方法，制备了横向周期为１μｍ、纵向三层叠加的三维侧墙量子线列阵．阴极荧光谱研究表明：在５Ｋ下，发光主要来自量子线区域，在两侧的量子阱区域只有很弱的发光峰；认为低温下载流子主要束缚在量子线区域，在量子阱区域也有少量载流子被外延层涨落产生的局域态所束缚．随温度升高到８５Ｋ以上直至室温下，只能观察到来自量子线区域的发光峰．这是由于束缚在量子阱局域态中的载流子大部分由于热激发而弛豫至量子线区域，参与量子线的发光．这种量子线列阵横向限制能量达到了２２０ｍｅＶ，表明该量子线列阵结构可以用于制备发光等实用器件．
This article presents a practical side-wall GaAs quantum wire and its array structure. The anisotropy of molecular beam epitaxy on the (311) A substrate etched along the [01-1] direction results in the formation of the sidewall quantum-wire structure. By grating etching method, a three-dimensional sidewall spacer array with a horizontal period of 1μm and a vertical three-layer stack is prepared. The results of cathodic fluorescence spectroscopy show that at 5K, the luminescence mainly comes from the quantum wire region, and there are only very weak luminescence peaks in the quantum well region on both sides. It is considered that the carriers are mainly bound in the quantum wire region at low temperature, The flow of electrons is bound by the local state caused by the ebb and flow of the epitaxial layer. As the temperature rises above 85K up to room temperature, only luminescence peaks from the quantum wire region can be observed. This is because most of the carriers trapped in the quantum well local state relax due to thermal excitation to the quantum wire region and participate in the emission of quantum wires. This quantum wire array lateral limit energy reached 220meV, indicating that the quantum wire array structure can be used to prepare light and other useful devices.