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针对封装和ESD寄生对源极电感反馈结构低噪声放大器的影响,进行了详细的理论分析。在已发表文献的基础上,加入对ESD寄生引起的输入匹配网络改变的考虑,给出了新的噪声系数公式。根据分析结果,提出设计时的考虑。采用0.18μm CMOS工艺,设计了一款GPS L1波段的单端低噪声放大器。测试结果显示,电路增益达到18dB,噪声系数为2.2dB;在1.8V电压下,电流消耗为4.5mA。
Aiming at the influence of package and ESD parasitic on the low-noise amplifier with source inductance feedback structure, a detailed theoretical analysis is carried out. Based on the published literature, we consider the change of input matching network caused by ESD parasitics, and give a new formula of noise figure. According to the analysis results, put forward the design considerations. Using 0.18μm CMOS technology, designed a GPS L1 band single-ended low-noise amplifier. The test results show that the circuit gain of 18dB, the noise figure of 2.2dB; 1.8V voltage, the current consumption of 4.5mA.