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法国国家电信研究中心的微电子研究所(CNET)内一支工程师队伍已成功地制成单块半导体-金属-半导体晶体管。早在二十多年前就提出用这种结构来代替常规的npn晶体管,自那时起,它一直困扰着研究者们。他们的成就是获得了用一层很薄的金属代替标准晶体管基区的器件。这样就避免了常规晶体管因基区电阻率造成的性能局限,大大缩短了电子从集电极到发射极的必要渡越时间。AT＆TBell实验室的研究人员计算过:对于优化的SMS晶体管,其理论截止频率应为30GHz左右,它甚至比GaAs器件的速度还快。从结构上讲,SMS晶体管简单得令人难以置信,钴的二硅化物薄层夹在二层较厚的硅层中。工作时,二个硅层分别作为晶体管的发射极与集电极,而把CoSi_2作为基区。
An engineer team at CNET’s Microelectronics Research Institute (CNET) has successfully made a monolithic semiconductor-metal-semiconductor transistor. More than two decades ago it was proposed to replace this conventional npn transistor with this structure, which has plagued researchers since then. Their achievement was to get a device that uses a thin layer of metal instead of a standard transistor base. This avoids the performance limitations of conventional transistors due to the base resistivity and greatly reduces the necessary transit time of electrons from the collector to the emitter. Researchers at AT & TBell Lab have calculated that for optimized SMS transistors, the theoretical cut-off frequency should be around 30GHz, which is even faster than GaAs devices. Structurally, the SMS transistor is simply unbelievable. The cobalt disilicide layer is sandwiched between two thicker silicon layers. In operation, two layers of silicon are used as the emitter and collector of the transistor, respectively, while the CoSi_2 is used as the base.