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热载流子效应产生的栅电流是影响器件功耗及可靠性的重要因素之一,本文基于热载流子形成的物理过程,建立了单轴应变硅NMOSFET热载流子栅电流模型,并对热载流子栅电流与应力强度、沟道掺杂浓度、栅源电压、漏源电压等的关系,以及TDDB(经时击穿)寿命与栅源电压的关系进行了分析研究.结果表明,与体硅器件相比,单轴应变硅MOS器件不仅具有较小的热载流子栅电流,而且可靠性也获得提高.同时模型仿真结果与单轴应变硅NMOSFET的实验结果符合较好,验证了该模型的可行性.
The gate current generated by the hot carrier effect is one of the important factors affecting the power dissipation and reliability of the device. Based on the physical process of hot carrier formation, a hot carrier gate current model of uniaxial strained silicon NMOSFET The relationship between the hot carrier gate current and the stress intensity, the channel doping concentration, the gate-source voltage, the drain-source voltage and the relationship between the lifetime of TDDB and the gate-source voltage were analyzed. Compared with bulk silicon devices, uniaxial strained silicon MOS devices not only have smaller hot carrier gate current, but also have higher reliability.At the same time, the simulation results agree well with the experimental results of uniaxial strained silicon NMOSFETs, The feasibility of the model is verified.