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A 10 Gb/s OEIC(optoelectronic integrated circuit)optical receiver front-end has been studied and fabricated based on theφ-76 mm GaAs PHEMT process;this is the first time that a limiting amplifier(LA)has been designed and realized using depletion mode PHEMT.An OEIC optical receiver front-end mode composed of an MSM photodiode and a current mode transimpedance amplifier(TIA)has been established and optimized by simu- lation software ATLAS.The photodiode has a bandwidth of 10 GHz,a capacitance of 3 fF/μm and a photosensitive area of 50×50μm2.The whole chip has an area of 1511×666μm2.The LA bandwidth is expanded by spiral inductance which has been simulated by software HFSS.The chip area is 1950×1910μm2 and the measured results demonstrate an input dynamic range of 34 dB(10–500 mVpp)with constant output swing of 500 mVpp.
A 10 Gb / s OEIC (optoelectronic integrated circuit) optical receiver front-end has been studied and fabricated based on the φ-76 mm GaAs PHEMT process; this is the first time that a limiting amplifier (LA) has been designed and realized using depletion mode PHEMT.An OEIC optical receiver front-end mode composed of an MSM photodiode and a current mode transimpedance amplifier (TIA) has been established and optimized by simu lation software ATLAS. The photodiode has a bandwidth of 10 GHz, a capacitance of 3 fF / μm and a photosensitive area of 50 × 50 μm 2. The whole chip has an area of 1511 × 666 μm 2. The LA bandwidth is expanded by spiral inductance which has been simulated by software HFSS. The chip area is 1950 × 1910 μm 2 and the measured results demonstrate an input dynamic range of 34 dB (10-500 mVpp) with constant output swing of 500 mVpp.