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提出了一种T形结构的边缘场发射阴极，它具有比通常的场发射体的发射面积大得多的特点。首次采用低压化学气相沉积技术生长内层重掺砷、外层较掺砷的多晶硅薄膜；利用氢氟酸／硝酸／冰醋酸腐蚀液对不同掺砷浓度多晶硅选择性腐蚀的特点，成功制备了T形结构的多晶硅边缘场发射阵列（FEA）；本方法对于制备类似结构的边缘场发射器件有意义。在此基础上建立了三极管几何模型，最后采用有限差分法对该三极管模型进行了静电分析。
A T-shaped fringe field emission cathode is proposed that has a much larger emission area than conventional field emitters. For the first time, a low-pressure chemical vapor deposition technique was used to grow polycrystalline silicon films with arsenic-rich and arsenic-rich outer layers. By using hydrofluoric acid / nitric acid / glacial acetic acid etching solution to selectively etch polycrystalline silicon with different arsenic concentration, T Shaped polysilicon fringe field emission array (FEA); the method is of significance for preparing a fringe field emission device of similar structure. Based on this, the transistor geometry model was established. Finally, the triode model was electrostatically analyzed by finite difference method.