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针对功率模块高可靠性、宽工作温度范围(-60oC~200oC)的应用特点,研制了一种基于全烧结技术的无键合线、无底板、紧凑型平面SiC功率模块,讨论了SiC模块封装设计及低电感柔性PCB互连技术;为了提高功率模块的可靠性及耐高温性能,采用低温银烧结技术替代传统钎焊焊接工艺,所研制功率模块搭载了SiC JFET和SiC SBD芯片组。测试结果表明,所研制的SiC功率模块具有良好的开关性能。
In view of the application characteristics of high reliability and wide operating temperature range of power module (-60oC ~ 200oC), a SiC-based power module with no bonding wire, no bottom plate and compactness based on full sintering technology was developed. The SiC module package Design and low inductance flexible PCB interconnect technology. In order to improve the reliability and high temperature performance of the power module, the low temperature silver sintering technology is adopted to replace the traditional brazing welding process. The developed power module is equipped with SiC JFET and SiC SBD chipsets. The test results show that the developed SiC power module has good switching performance.