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每平方时具有百万位数据存储能力的表面电荷晶体管已制成。这种新的电路元件有三个电极:源、传输栅和接收电极(见图1)。它是利用流经半导体表面的电荷的传输作用。目前正研究能存储一位的包括两个传输栅、一个源和一个接收电极的结构。然而发现,制成一行的器件能形成串联的移位寄存器。制作方法是在硅片上涂复一层1000埃的绝缘膜。在绝缘膜上淀积象锰之类的耐熔金属形成由窄条分开的接收电极的源。在这些电极上淀积第二层绝缘膜,形成第三个窄电极-传输栅,这样就重迭在源和接收电极之间的薄条上。传输栅象个水闸,控制着源(较高电平)和接收电极(较低电平)间的电荷传输。只要少量的栅极电荷即可控制通过电极间隙的较大的电荷传输。结果,器件出现电荷和电压增益。
Surface charge transistors with millions of bits of data storage capacity per square foot have been made. The new circuit element has three electrodes: the source, the transmission gate and the receiving electrode (see Figure 1). It is the use of charges flowing through the surface of the semiconductor transmission. Currently, a structure capable of storing one bit including two transfer gates, a source, and a receiving electrode is being studied. However, it was found that the devices made in one row can form a series shift register. The production method is coated with a layer of silicon on the 1000-angstrom insulating film. Depositing a refractory metal such as manganese on the insulating film forms a source of receiving electrodes separated by strips. A second layer of insulating film is deposited on these electrodes to form a third narrow electrode-transfer gate so as to overlap the web between the source and receiver electrodes. The transfer gate is a gate that controls the charge transfer between the source (higher level) and the receiving electrode (lower level). With a small amount of gate charge, a larger charge transfer through the electrode gap can be controlled. As a result, the device experiences charge and voltage gain.