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目前在工厂已能制作位错密度小于1,000厘米~(-2)的直径为2～3吋(50～75毫米)的单晶。这些单晶是由4,000～8,000克熔体中生长出来的。由于探用了内圆刁片,所以切片技术已能切割直径为3(1/4)吋(82毫米)的单晶了。如切割更大尺寸的单晶,则需要探用锯条或金属丝切片方法。经过研磨和化学变薄过程,可采用几种抛光法来加工出平滑的、无损伤的表面。其中最有效的方法就是能提供良好结果的一种非碱性淤浆系统,而这些结果与硅片的传导率、型式和电阻率无关。
Currently, single crystals with a diameter of 2 to 3 inches (50 to 75 mm) with a dislocation density of less than 1,000 cm -2 can be produced in the factory. These single crystals are grown from 4,000 to 8,000 grams of melt. Thanks to the inner diameter of the cone, the slicing technique has been able to cut single crystals up to 3 (1/4) in. (82 mm) in diameter. Cutting a larger single crystal requires probing the saw blade or wire slicing method. After grinding and chemical thinning, several polishing methods can be used to produce a smooth, nondestructive surface. The most effective of these is a non-alkaline slurry system that provides good results regardless of the conductivity, type and resistivity of the wafer.