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将ＤＬＴＳ用于对ＩｎＡｓ／ＧａＡｓＱＤ结构样品的测量，测定了ＱＤ能级发射载流子的热激活能；获得了ＱＤ能级俘获电子过程伴随有多声子发射（ＭＰＥ）、ＱＤ能级存在一定程度的展宽、以及在某些特定的生长条件下，存在亚稳生长构形的实验证据．结果表明：ＤＬＴＳ在ＱＤ体系的研究中有其特有的功能
DLTS was used to measure InAs / GaAsQD structure samples, and the thermal activation energy of QD level emission carriers was determined. The QD level trapped electrons process was accompanied by multi-phonon emission (MPE) The degree of broadening, and under certain growth conditions, there is experimental evidence of metastable growth configuration. The result shows that DLTS has its unique function in the research of QD system