已经研制出最高振荡频率超过12千兆赫的砷化镓场效应晶体管。本文阐述了 GaAs 场效应晶体管的设计和制作,并证明在沟道中强场效应对器件特性的重要影响。同时还报道了10千兆赫的散射参数测量数据及在2千兆赫的噪声参数。 Gallium arsenide field-effect transistors have been developed that have a maximum oscillation frequency in excess of 12 gigahertz. This article describes the design and fabrication of GaAs field effect transistors and demonstrates the important effect that strong field effects have on device characteristics in the channel. Also reported are 10 GHz scattering parameter measurements and noise parameters at 2 GHz.