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首先用光激励的方法研究了有源区成份选择范围较宽的 InGaAsP/InP异质结构的发光特性和阈值特性。指出,在从λ=1.5μm 的结构向λ=1.1μm 的“宽带”结构过渡时,由于俄歇复合的衰减,在 T>250K 情况下表征振荡阈值温度关系的参数 T_(02)的值,从60K 增大到90～95K。由于这一原因,在1.1<λ<1.5μm 范围内减小λ时,于高温区就发生了绝对阈值降低的现象。在“宽带”InGaAsP/InP 异质结构中,T_(02)和阈值的绝对值受自发发光效率的强温度关系的限制,而与俄歇过程无关。
Firstly, the light-emitting properties and threshold characteristics of InGaAsP / InP heterostructures with a wide range of active components were studied by using photoexcitation method. It is pointed out that the value of parameter T_ (02), which characterizes the oscillation threshold temperature dependence at T> 250K due to the decay of Auger recombination, at the transition from the structure of λ = 1.5μm to the “broadband” structure of λ = 1.1μm, Increased from 60K to 90 ~ 95K. For this reason, when λ is decreased in the range of 1.1 <λ <1.5 μm, the absolute threshold reduction occurs in the high temperature region. In the “broadband” InGaAsP / InP heterostructures, the absolute value of T_ (02) and the threshold are limited by the strong temperature dependence of spontaneous emission efficiency, irrespective of the Auger process.