GaN/Pb(Zr0.53 Ti0.47)O3 structures have been fabricated by light radiation heating low-pressure metal-organic chemical deposition and pulsed laser deposition. These structures show leakage current lower than 10-11 A at applied voltage of 5 V. X-ray diffraction shows that ferroelectric Pb(Zr0.53 Ti0.47)O3 films directly on GaN are well crystallized with perovskite structure. Because of the high thermal stability and relatively smaller mismatch between GaN and ferroelectrics in comparison with that of Si/ferroelectric structures, GaN looks like more promising as semiconductor active layer for metal-ferroelectric-semiconductor field effect transistors.