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采用直流磁控溅射技术,首先在玻璃衬底上制备Mo薄膜,然后制备CuIn预制层。以固态硒粉为硒源,采用硒薄膜法和硒蒸气法两种硒化工艺,经过三步升温硒化方式对CuIn预制膜进行硒化制备CuInSe2薄膜。通过X射线衍射、能量散射谱和扫描电镜测试分析手段,分析CuIn预制膜和每一步硒化热处理后薄膜结构和形貌的变化。结果表明:两种方法硒化后均形成具有单一黄铜矿相结构的CuInSe2薄膜,薄膜具有(112)面择优取向,硒蒸气法形成的晶粒较大,但均匀性差。
Using DC Magnetron Sputtering, a Mo film was first prepared on a glass substrate and then a CuIn preform was prepared. Solid selenium powder was used as selenium source, Selenium thin film method and selenium vapor method were used for selenization. CuInSe2 thin films were prepared by selenization of CuIn pre-film by three-step heating and selenization method. X-ray diffraction, energy dispersive spectroscopy and scanning electron microscopy were used to analyze the changes of film structure and morphology after CuIn pre-filming and selenization heat treatment. The results show that CuInSe2 films with a single chalcopyrite phase are formed after selenization by both methods. The film has a preferred orientation of (112) plane and the grains formed by Se vapor method are large but the uniformity is poor.