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利用直流电弧技术在硅基片上制备氮化铝薄膜,研究了薄膜的折射率、消光系数、透过率和沉积速率。薄膜的光学折射率、消光系数、厚度通过椭偏法测试并拟合得到;薄膜的透过率谱通过傅里叶变换红外光谱仪测试,薄膜的沉积速率通过厚度的相应时间计算得到;利用柯希模型来拟合测试得到可见区光学常数,外推得到薄膜在整个近红外、中远红外的光学常数.结果表明:薄膜的折射率随工艺参数的不同有较大的变化范围,并且薄膜在较宽的光谱范围内消光系数为零;薄膜的沉积速率达到85 nm·min~(-1),单面镀制氮化铝薄膜的硅样片的峰值透过滤达到了69.2%.
Aluminum nitride films were prepared on silicon substrates by DC arc technique. The refractive index, extinction coefficient, transmittance and deposition rate of the films were investigated. The optical refractive index, extinction coefficient and thickness of the film were measured and fitted by ellipsometry. The transmittance of the film was measured by Fourier transform infrared spectroscopy. The deposition rate of the film was calculated by the corresponding thickness of the film. Model to test the optical constants in the visible region and extrapolate the optical constants of the whole near-infrared and far-infrared of the film.The results show that the refractive index of the film varies greatly with the process parameters, , The extinction coefficient in the spectral range is zero; the deposition rate of the film reaches 85 nm · min -1, and the peak value of the silicon sample coated with aluminum nitride film on one side reaches 69.2%.