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借助于俄歇电子能谱分析,结合氩离子溅射剥蚀,对全面积超薄铝膜的AI/S_iO_x/S_iMIS结构太阳电池的纵向组份分布进行了研究。结果表明,实际的纵向结构为AI/AI_2O_3(+S_i)/S_i。定性地分析了MIS结构中的电流输运对界面和表面的依赖关系从而解释了器件宏观电学参数的稳定性。
By means of Auger electron spectroscopy and argon ion sputtering ablation, the longitudinal component distribution of Al / S_iO_x / S_iMIS solar cells with full area ultrathin aluminum film was studied. The results show that the actual longitudinal structure is AI / AI_2O_3 (+ S_i) / S_i. The dependence of current transport on interface and surface in MIS structure is qualitatively analyzed to explain the stability of the device's macroscopic electrical parameters.