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利用电子回旋共振-等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)方法,采用二茂锰(Cp2Mn)作为Mn源,高纯氮气作为氮源,三乙基镓(TEGa)作为Ga源,在蓝宝石(α-Al2O3)(0001)衬底上外延生长GaMnN稀磁半导体薄膜.反射高能电子衍射(RHEED)、X射线衍射(XRD)、原子力显微镜(AFM)表征了GaMnN薄膜的晶体结构和表面形貌.GaMnN薄膜均表现出良好的(0002)择优取向,表明制备的薄膜倾向于c轴方向生长,薄膜保持很好的纤锌矿结构.表面形貌是由许多亚微米量级的晶粒按一致的取向规则堆砌而成的.超导量子干涉仪(SQUID)用来表征薄膜的磁性.SQUID分析表明,薄膜呈铁磁性,铁磁性仅可能来源于三元相GaMnN,薄膜的居里温度高于350K.而且,高Mn的含量可以提高薄膜的居里温度.
Using electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) method, using manganese dioxide (Cp2Mn) as a source of Mn, high purity nitrogen as a nitrogen source, triethyl gallium (TEGa) as a Ga source, GaMnN thin films were epitaxially grown on sapphire (α-Al2O3) (0001) substrates.The crystal structure and surface morphology of GaMnN thin films were characterized by high energy electron diffraction (RHEED), X-ray diffraction (XRD) and atomic force microscopy (AFM) GaMnN films show good (0002) preferred orientation, indicating that the prepared films tend to grow in the c-axis direction and the films maintain a good wurtzite structure.The surface morphology is composed of many submicron-sized grains (SQUID) was used to characterize the magnetic properties of the films.The results of SQUID showed that the films were ferromagnetic and the ferromagnetism could only originate from the ternary phase GaMnN. The Curie temperature of the films was high At 350 K. Moreover, the high Mn content can increase the Curie temperature of the film.