The prospects of a p~+nn~+ cubic silicon carbide(3C-SiC/β-SiC) based IMPATT diode as a potential solid-state terahertz source is studied for the first time through a modified generalized simulation scheme.The simulation predicts that the device is capable of generating an RF power output of 63.0 W at 0.33 THz with an efficiency of 13%. The effects of parasitic series resistance on the device performance and exploitable RF power level are further simulated. The studies clearly establish the potential of 3C-SiC as a base semiconductor material for a high-power THz IMPATT device.Based on the simulation results,an attempt has been made to fabricateβ-SiC based IMPATT devices in the THz region.Single crystalline,epitaxial 3C-SiC films are deposited on silicon(Si)(100) substrates by rapid thermal chemical vapour deposition(RTPCVD) at a temperature as low as 800℃using a single precursor methylsilane,which contains Si and C atoms in the same molecule.No initial surface carbonization step is required in this method.A p-n junction with an n-type doping concentration of 4×10~(24) m~(-3)(which is similar to the simulated design data) has been grown successfully and the characterization of the grown 3C-SiC film is reported in this paper.It is found that the inclusion of Ge improves the crystal quality and reduces the surface roughness. The prospects of ap ~ + nn ~ + cubic silicon carbide (3C-SiC / β-SiC) based IMPATT diode as a potential solid-state terahertz source is studied for the first time through a modified generalized simulation scheme. The simulation predicts that the device is capable of generating an RF power output of 63.0 W at 0.33 THz with an efficiency of 13%. The effects of parasitic series resistance on the device performance and exploitable RF power level are further simulated. The studies clearly establish the potential of 3C- SiC as a base semiconductor material for a high-power THz IMPATT device. Based on the simulation results, an attempt has been made to fabricate β-SiC based IMPATT devices in the THz region. Single crystalline, epitaxial 3C-SiC films are deposited on silicon (Si) (100) substrates by rapid thermal chemical vapor deposition (RTPCVD) at a temperature as low as 800 ° C using a single precursor methylsilane, which contains Si and C atoms in the same molecule. No initial surface carbonization step is required in this method. A pn ​​junction with an n-type doping concentration of 4 × 10 ~ (24) m ~ (-3) (which is similar to the simulated design data) has been grown successfully and the characterization of the grown 3C -SiC film is reported in this paper. It is found that the inclusion of Ge improves the crystal quality and reduces the surface roughness.