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采用电沉积方法，在含ＫＭｎｏ４的ＺｎＳＯ４溶液中，通过控电位和控电流，得到高择优取向的（０００２）和（１０１１）Ｚｎ沉积层．用Ｘ射线衍射技术和扫描电子显微镜进行表征．结果表明这种高择优取向的Ｚｎ沉积层与相应的Ｚｎ单晶具有相似的ＸＲＤ图，且具有比较完整的晶体结构，几乎不存在位错应力；还通过阴极极比曲线讨论了形成高择优取向Ｚｎ沉积层的可能原因．
Electrodeposition method was used to obtain highly preferred (0002) and (1011) Zn deposits by potentiostatic and current control in ZnSO4 solution containing KMno4. Characterization by X-ray diffraction and scanning electron microscopy. The results show that the high-oriented Zn deposit has a similar XRD pattern with the corresponding Zn single crystal, and has a relatively complete crystal structure with almost no dislocation stress. The formation of a high preferred orientation Possible Causes of Zn Deposition.