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采用ＭＢＥ制备了ＣｄＳｅ／ＣｄＺｎＳｅ 多量子阱结构．Ｘ射线衍射谱的最高阶次是７，在７７Ｋ下ＰＬ光谱的线宽是４．２ｎｍ ，表明我们的样品具有较高的质量．在变密度激发的ｐｓ 时间分辨光谱中，随着激发密度的减小发光衰减时间减小，认为是由无辐射复合引起的．
CdSe / CdZnSe multiple quantum well structure was prepared by MBE. The highest order of the X-ray diffraction spectrum was 7 and the linewidth of the PL spectrum at 77 K was 4.2 nm, indicating that our sample has a higher mass. In the variable-density excited ps time-resolved spectrum, the emission decay time decreases with the decrease of the excitation density, which is believed to be caused by the non-radiative recombination.