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本文研究了氢原子与Ｓｉ中４ｄ过渡杂质（Ｐｄ、Ｒｈ、Ｒｕ、Ｍｏ）引入深中心的相互作用，得到了Ｓｉ中这些深中心被钝化的难易程度．从钝化角度支持了Ｓｉ：Ｐｄ与Ｓｉ：Ｒｈ中有关能级属于同一中心、不同荷电态的判断，同时提出了Ｓｉ：Ｍｏ中Ｅ（０．５３）和Ｈ（０．１６）两个能级属于同一中心、不同荷电态的证据，通过氢对已知同一中心、不同荷电态两个能级的相互作用，对氢的钝化机理作了初步探讨．
In this paper, the interaction of hydrogen atoms with 4d transitional impurities (Pd, Rh, Ru, Mo) introduced into the deep center of Si has been studied, and the easiness of passivation of these deep centers in Si has been obtained. From the passivation point of view, we support the judgment that the related energy levels of Si: Pd and Si: Rh belong to the same center and different charge states. Two E (0.53) and H (0.16) Si The energy levels belong to the same center, and the evidence of different charge states makes a preliminary discussion of the passivation mechanism of hydrogen through the interaction of two energy levels known to the same center and different states of charge.