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提升半导体激光器的腔面抗光学灾变(COD)损伤的能力,改善半导体激光器的工作特性,一直是大功率半导体激光器器件工艺研究的难点。基于薄膜应力使基底半导体材料带隙变化的原理,采用直流磁控溅射方法在不同条件下溅射生成不同内应力的Al_xN_y绝缘介质膜。通过研究大功率半导体激光器腔面退化机理,借助Al_xN_y等应力膜设计制作了一种新型非吸收透明窗口结构的宽条形半导体激光器,使器件平均最大输出功率提高46.5%。垂直发散角达到21°,水平发散角达到6.1°,2000 h加速老化试验,其千小时退化速率小于0.091%。
Improving the ability of the cavity surface of a semiconductor laser to resist the optical damage (COD) damage and improving the operating characteristics of the semiconductor laser has been a difficult point in the research of high power semiconductor laser device technology. Based on the principle that the film stress changes the bandgap of the base semiconductor material, DC magnetron sputtering is used to generate Al_xN_y dielectric films with different internal stresses under different conditions. By researching the mechanism of cavity surface degradation in high power semiconductor lasers, a new type of wide strip semiconductor laser with non-absorbing transparent window structure was designed and fabricated by using Al_xN_y stress film to increase the average maximum output power of the device by 46.5%. Vertical divergence angle reached 21 °, horizontal divergence angle reached 6.1 °, 2000 h accelerated aging test, the degradation rate per thousand hours less than 0.091%.