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考虑了纤锌矿GaN/AlxGa1-xN量子阱(QW)材料中空穴带质量和光学声子模的各向异性以及声子频率随波矢变化的效应,采用改进的LLP变分法计算了纤锌矿氮化物QW中激子的基态能量和结合能。给出了激子的基态能量和结合能随着QW宽度和Al组分变化的函数关系,并对闪锌矿和纤锌矿GaN/Al0.3Ga0.7N QW材料中激子的基态能量和结合能进行了对比。计算结果表明,纤锌矿GaN/Al0.3Ga0.7N QW材料中激子的基态能量和结合能随着阱宽的增大而降低,阱宽较小时无限深势阱中激子的基态能量和结合能量明显大于有限深势阱中的相应值,阱宽较大时这两种势阱中激子的基态能量和结合能量值趋于一致。激子的基态能量和结合能随着Al组分的增大而逐渐增大;电子-声子相互作用使激子的结合能明显降低;纤锌矿GaN/Al0.3Ga0.7N QW中激子的基态能量低于闪锌矿GaN/Al0.3Ga0.7N QW中激子的基态能量,而纤锌矿GaN/Al0.3Ga0.7N QW中激子的结合能高于闪锌矿GaN/Al0.3Ga0.7N QW中激子的结合能。
Considering the effects of cavity mass and optical phonon mode anisotropy and the change of phonon frequency with wave vector in wurtzite GaN / AlxGa1-xN quantum well (QW) materials, the modified LLP variational method was used to calculate the fiber Ground state energy and binding energy of excitons in zinc nitride QW. The ground state energy and the binding energy of the excitons are given as a function of the QW width and the change of the Al composition, and the energy of the ground state and the binding of excitons in the zinc blende and wurtzite GaN / Al 0.3 Ga 0.7 N QW materials Can be compared. The calculated results show that the ground state energy and binding energy of excitons in the wurtzite GaN / Al 0.3 Ga 0.7 N QW material decrease with the increase of the well width, and the ground state energy of the excitons in the infinite well with the smaller well width and The binding energies are obviously larger than the corresponding values in the finite deep potential well. When the well width is large, the ground state energies and the binding energy values of the excitons in the two potential wells tend to be the same. The ground state energy and the binding energy of the excitons increase with the increase of the Al composition. The electron-phonon interaction can significantly reduce the binding energy of the excitons. The excitons in the wurtzite GaN / Al0.3Ga0.7N QW The ground state energy of the wurtzite GaN / Al0.3Ga0.7N QW is lower than that of the sphalerite GaN / Al0.3Ga0.7N QW, whereas the binding energy of the excitons in the wurtzite GaN / Al0.3Ga0.7N QW is higher than that of the sphalerite GaN / Al0. The binding energy of excitons in 3Ga0.7N QW.