通过在共面波导信号线上贴敷低介电常数的薄层绝缘介质,使得MEMS金属桥与共面波导信号线在“关”态下形成MIM电容的方法,实现了提高“关”“开”两种状态下的电容比,从而提高了单位长度上的相移量.与传统的设计方法相比,在达到同样相移量指标的情况下仅需少量的MEMS金属桥就可以实现,工作的可靠性得到提高,未封装MEMS移相器器件的总体尺寸可以减小60%左右,此外由于在“关”态下,金属桥直接贴敷在介质表面上而不会随着外界环境震动,因此移相器的相移精度显著的提高. The method of forming the MIM capacitor in the “off” state of the MEMS metal bridge and the coplanar waveguide signal line is achieved by applying a low dielectric constant thin insulating medium on the coplanar waveguide signal line, The capacitance ratio of the two states, thereby increasing the phase shift per unit length.Compared with the traditional design method, in the case of the same phase shift index only a small amount of MEMS metal bridge can be achieved, working The reliability is improved, the overall size of the unpackaged MEMS phase shifter device can be reduced by about 60%. In addition, since the metal bridge directly sticks to the surface of the medium without being vibrated with the external environment under the “off” state, Phase shifter phase shift accuracy is significantly improved.