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采用射频磁控共溅射法制备了纳米GaAs－SiO2镶嵌复合薄膜．通过X射线衍射、透射电镜和X射线光电子能谱等手段研究了薄膜的结构及其与沉积时基片温度间的关系．结果表明：薄膜由晶态的GaAs及非晶SiO2组成，GaAs在沉积过程中未明显氧化，且以纳米颗位形式均匀地弥散在SiO2中；GaAs的平均粒径依赖于沉积时的基片温度获得了GaAs的平均位径为3～10nm的GaAs－SiO2镶嵌复合薄膜
A nano-GaAs-SiO2 inlay composite film was prepared by RF magnetron sputtering. The structure of the thin film and its relationship with the substrate temperature during deposition were investigated by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy. The results show that the thin film consists of crystalline GaAs and amorphous SiO2. The GaAs is not obviously oxidized in the deposition process and uniformly dispersed in the form of nano-scale. The average particle size of GaAs depends on the temperature of the substrate during deposition GaAs-SiO2 inlaid composite films with GaAs average diameter of 3 ~ 10nm were obtained