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自护式Smart Discrete器件是低边、自钳位、46V、48～185mΩ的MOSFET,集成了电流限制保护、过热关断、过压保护以及静电放电(ESD)保护。自护式电路设计结合了漏极电流感应与限制,在负载短路的情况下,电流限制电路保护可阻止电流尖峰。如果这种情况持续下去,温度电路监测接点温度将在到达某设定点时(典型值为175℃)关断器件。内部温度限制电路设计为在接点温度降低约15℃时自动接通主MOSFET。器件不断进
Self-shielded Smart Discrete devices are low-side, self-clamping, 46V, 48 ~ 185mΩ MOSFETs that integrate current-limit protection, thermal shutdown, overvoltage protection and electrostatic discharge (ESD) protection. Self-shielded design incorporates drain current sensing and limiting. Current-limit circuit protection prevents current spikes under load short-circuit conditions. If this condition persists, the temperature circuit monitoring the contact temperature will turn off the device at a set point (typically 175 ° C). The internal temperature limiter circuit is designed to automatically turn on the main MOSFET when the junction temperature drops about 15 ° C. Continuously into the device