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有机金属化学汽相沉积(MO-CVD)技术是一种新型薄膜材料制备技术,它优于目前通常采用的一般CVD和物理方法。主要优点:采用金属有机化合物为物质源,选择的范围比较大,其中含有易断裂的M-C键,易发生气相热分解氧化反应,成膜温度比较低,反应副产物仅有易挥发的碳氢化合物,使成膜环境无污染,易获得优质膜。因该技术是化学成膜,排除了物理方法中固有的不易控制化学计量的问题,易获得优质膜层。
Organometallic chemical vapor deposition (MO-CVD) technology is a new thin film material preparation technology that outperforms the common CVD and physical methods commonly used today. The main advantages: the use of metal organic compounds as a material source, the choice of a relatively large range, which contains easy to break the MC bond, prone to gas phase thermal decomposition oxidation reaction, the film is relatively low temperature, the reaction by-products only volatile hydrocarbons , So that film-forming environment pollution-free, easy access to high-quality film. Because of this technology is a chemical film, excluding physical methods inherent in difficult to control stoichiometry problems, easy access to high-quality film.