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讨论了在低温下以高纯金属钒作靶材,用直流磁控溅射的方法制备出了氧化钒薄膜。通过设计正交试验,分析了氩气和氧气的流量比,溅射功率,工作压强,基底温度对氧化钒薄膜沉积速率和电阻温度系数TCR的影响,采用RTP-500型快速热处理机对氧化钒薄膜样品进行了退火热处理,实验结果表明:当Ar与O2的比例为100:4,溅射功率为120W,工作压强为2Pa时,所获得薄膜TCR较大,都在-2%/K附近,最高的可达-3.6%/K。
The vanadium oxide films were prepared by DC magnetron sputtering at low temperature with high purity vanadium as a target. Through the design of orthogonal experiment, the influence of flow ratio of argon and oxygen, sputtering power, working pressure and substrate temperature on the deposition rate of vanadium oxide film and the temperature coefficient of resistance TCR were analyzed. Using RTP-500 rapid heat treatment machine, The experimental results show that the TCR of the obtained films is large at -2% / K when the ratio of Ar to O2 is 100: 4, the sputtering power is 120W, and the working pressure is 2Pa. The highest up to -3.6% / K.