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介绍了采用角分辨X 射线光电子解谱 (angleresolvedX rayphotoelectricspectrum(ARXPS) )测试薄膜不同角度光电子能谱强度 ,计算电子平均自由程 ,从而计算出PtSi超薄膜厚度的方法 ,并给出其透射电子显微镜 (TEM)晶格象验证结果 .实验表明该方法简单易行 ,适用于其他超薄膜厚度的测量
A method to measure the thickness of PtSi ultrathin film by using angle-resolved X-ray photoelectron spectroscopy (ARXPS) to test the intensity of photoelectron spectrum at different angles and calculate the mean free path of electron is presented. The transmission electron microscopy TEM) lattice.The experimental results show that this method is simple and easy to be applied to the measurement of other ultrathin film thickness