开发 Cu、Au 的 MOCVD(有机金属化合物气相沉积法)材料,作为256兆位 DRAM 新一代半导体布线材料。Cu 与 Al、W 比较,比电阻低,比铝的可靠性高,线宽可达0.25μm 以下,有希望用于下一代高速动作要求的256兆位的半导体布线材料。Au 比电阻低,耐蚀性好,要求可靠性高的化合物半导体器件,TFT(薄膜技术)液晶的电极材料等期待得到应用。超大规模集成电路用键合金丝是以25～30μm 细丝为中心的。4～16兆位的 DRAM 高集成度金丝由Φ25μm 发展到Φ23μm,进而再发展到 Developed Cu, Au MOCVD (Organometallic Compound Vapor Deposition) material as a new generation of 256 Mbit DRAM semiconductor wiring material. Compared with Al and W, Cu has lower specific resistance, higher reliability than aluminum, and has a line width of up to 0.25 μm. It is expected to be a 256-Mbit semiconductor wiring material that is expected to be used in the next generation of high-speed operation. Au low specific resistance, good corrosion resistance, high reliability requirements of compound semiconductor devices, TFT (thin film technology) liquid crystal electrode material is expected to be applied. Binding wires for very large scale integrated circuits are centered on 25-30μm filaments. 4 to 16 megabit DRAM high integration gold from Φ25μm to Φ23μm, and then re-developed to