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当把正硅酸乙酯的源温控制在13℃左右时,其热分解速率大大降低,所淀积的SiO_2的致密性和对扩散杂质的掩蔽能力大大提高,可
When the source temperature of tetraethyl orthosilicate is controlled at about 13 ℃, its thermal decomposition rate is greatly reduced, the compactness of the deposited SiO 2 and the masking ability of diffusion impurities are greatly enhanced,