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研究了用Ag-Sn作为键合中间层的圆片健合。相对于成熟的Au-Sn键合系统(典型键合温度是280℃),该系统可以提供更低成本、更高键合后分离(De-Bonding)温度的圆片级键合方案。使用直径为100mm硅片,盖板硅片上溅射多层金属Ti/Ni/Sn/Au,利用Lift-off工艺来形成图形。基板硅片上溅射Ti/Ni/Au/Ag。硅片制备好后,将盖板和基板叠放在一起送入键合机进行键合。键合过程在N2气氛中进行,键合过程中不需要使用助焊剂。研究了不同键合参数,如键合压力、温度等对键合结果的影响。剪切强度测试表明样品的剪切强度平均在55.17MPa。TMA测试表明键合后分离温度可以控制在500℃左右。He泄漏测试证明封接的气密性极好。
The wafer bonding using Ag-Sn as the bonding intermediate layer was studied. The system offers a lower cost, higher wafer-level bonding scheme with higher De-Bonding temperature than the established Au-Sn bonding system (typical bonding temperature is 280 ° C). Multi-layer metal Ti / Ni / Sn / Au was sputtered on the cover wafer using a 100-mm-diameter silicon wafer and a lift-off process was used to form the pattern. Ti / Ni / Au / Ag is sputtered on a silicon substrate. After the wafer is prepared, the cover and the substrate are stacked together and fed to the bonding machine for bonding. The bonding process is carried out in an N2 atmosphere without the use of a flux during the bonding process. The effects of different bonding parameters, such as bonding pressure and temperature, on the bonding results were studied. Shear strength test showed that the average shear strength of the sample at 55.17MPa. TMA test showed that the separation temperature after the bond can be controlled at about 500 ℃. He leak test proved that the sealing of the air tightness.