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采用新型的两步激光晶化技术在玻璃衬底上制备出性能良好的多晶硅薄膜 ,并制作了多晶硅薄膜晶体管 ,其迁移率为 10 3cm2 /V·s ,开关态电流比为 1× 10 7。采用椭偏光谱法分析了薄膜的结构 ,并提出多层膜模型模拟薄膜结构。测量结果与计算数据十分吻合。
A novel two-step laser crystallization technique was used to fabricate a polycrystalline silicon thin film with good performance on a glass substrate. A polycrystalline silicon thin film transistor was fabricated with a mobility of 10 3 cm 2 / V · s and an on-state current ratio of 1 × 10 7. The structure of the film was analyzed by ellipsometry, and the multi-layer film model was proposed to simulate the film structure. The measured results are in good agreement with the calculated data.