利用CMOS/SOI工艺在 4英寸SIMOX材料上成功制备出沟道长度为 1μm、器件性能良好的CMOS/SOI部分耗尽器件和电路 ,从单管的开关电流比看 ,电路可以实现较高速度性能的同时又可以有效抑制泄漏电流 .所研制的 5 1级CMOS/SOI环振电路表现出优越的高速度性能 ,5V电源电压下单门延迟时间达到 92ps,同时可工作的电源电压范围较宽 ,说明CMOS/SOI技术在器件尺寸降低后将表现出比体硅更具吸引力的应用前景 . The CMOS / SOI partially depleted devices and circuits with a channel length of 1μm and good device performance were successfully fabricated on the 4-inch SIMOX by CMOS / SOI process. The circuit can achieve higher speed performance While the leakage current can be effectively suppressed.The developed 51-level CMOS / SOI ring oscillator circuit shows superior high-speed performance, the single-gate delay time reaches 92ps under 5V supply voltage, and the working power supply voltage range is wide at the same time, Indicating that CMOS / SOI technology will show a more attractive application prospect than bulk silicon after the size of the device is reduced.